王国伟-中国科学院大学-UCAS
[中文]
[English]
教育背景
工作经历
出版信息
科研活动
基本信息
王国伟 男 硕导 中国科学院半导体研究所电子邮件： wangguowei@semi.ac.cn通信地址： 北京市海淀区清华东路甲35号邮政编码：
招生信息
招生专业
080903-微电子学与固体电子学
招生方向
红外探测，红外焦平面，分子束外延
教育背景
2007-09--2012-07 中国科学院半导体研究所 工学博士2003-09--2007-07 山东大学 理学学士
工作经历
工作简历
2012-07~现在, 中国科学院半导体研究所, 副研究员2007-09~2012-07,中国科学院半导体研究所, 工学博士2003-09~2007-07,山东大学, 理学学士
出版信息
发表论文
（1） Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 第 2 作者（2） Dark current simulation and analysis for InAs/GaSb long wavelength infrared barrier detectors, INFRARED PHYSICS & TECHNOLOGY, 2022, 第 5 作者（3） Oxidation related particles on GaSb (1 0 0) substrate surfaces, JOURNAL OF CRYSTAL GROWTH, 2022, 第 7 作者（4） Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy, 中国物理B, 2022, 通讯作者（5） Wet etching and passivation of GaSb-based very long wavelength infrared detectors, Wet etching and passivation of GaSb-based very long wavelength infrared detectors, CHINESE PHYSICS B, 2022, 第 8 作者（6） Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices, OPTICAL MATERIALS EXPRESS, 2021, 第 9 作者（7） High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2021, 通讯作者（8） MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice, JOURNAL OF CRYSTAL GROWTH, 2021, 通讯作者（9） Progress of long wavelength infrared focal plane arrays based on antimonide compounds superlattice, SCIENTIA SINICA-PHYSICA MECHANICA & ASTRONOMICA, 2021, 通讯作者（10） High-Performance Anodic Vulcanization-Pretreated Gated P+-pi-M-N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector, NANOSCALE RESEARCH LETTERS, 2021, 第 6 作者（11） 锑化物超晶格长波红外焦平面探测器研究进展, Progress of long wavelength infrared focal plane arrays based on antimonide compounds superlattice, 中国科学：物理学、力学、天文学, 2021, 第 3 作者（12） Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers, Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*, CHINESE PHYSICS B, 2021, 通讯作者（13） Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk materials, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2021, 第 5 作者（14） Performance and electron radiation damage of InAs/GaSb long-wave infrared detectors based on P pi MN design, JOURNAL OF APPLIED PHYSICS, 2021, 第11作者（15） The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection, INFRARED PHYSICS & TECHNOLOGY, 2020, 第 7 作者（16） High-performance midwavelength infrared detectors based on InAsSb nBn design, High-performance midwavelength infrared detectors based on InAsSb nBn design, CHINESE PHYSICS B, 2020, 通讯作者（17） Investigation of active-region doping on InAs/GaSb long wave infrared detectors, Investigation of active-region doping on InAs/GaSb long wave infrared detectors, CHINESE PHYSICS B, 2020, 通讯作者（18） MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers, JOURNAL OF CRYSTAL GROWTH, 2020, 通讯作者（19） Sb浸润界面对InAs/InAsSb超晶格晶体结构和探测器性能的影响, Influence of Sb-soak Interface on the Crystallization and the Detector Performance of InAs/InAsSb Superlattices, 材料导报, 2020, 第 3 作者（20） 基于锑化物二类超晶格的多色红外探测器研究进展, Research Progress in Antimonide-Based Type-Ⅱ Superlattice Multi-Color Infrared Detectors, 人工晶体学报, 2020, 第 3 作者（21） MBE Growth of High Quality InSb Thin Films on GaAs Substrates with AlInSb/GaSb as Compound Buffer Layers, Chinese Physics B, 2020, （22） MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates, OPTICAL AND QUANTUM ELECTRONICS, 2020, 通讯作者（23） High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy, High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy, 中国物理B:英文版, 2019, 通讯作者（24） Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-ii inas/gasb superlattices, OPTICAL AND QUANTUM ELECTRONICS, 2019, 第 4 作者（25） Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 mu m on 4-in. wafer, OPTICAL AND QUANTUM ELECTRONICS, 2019, 第 9 作者（26） High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector, CHINESE PHYSICS B, 2019, 通讯作者（27） Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide, INFRARED PHYSICS & TECHNOLOGY, 2019, 第 6 作者（28） High performance nBn detectors based on InGaAsSb bulk materials for short wavelength infrared detection, AIP Advances, 2019, 通讯作者（29） The 640 x 512 LWIR type-II superlattice detectors operating at 110 K, INFRARED PHYSICS & TECHNOLOGY, 2018, 第 5 作者（30） Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-II superlattices (T2SL), INFRARED PHYSICS & TECHNOLOGY, 2018, 第 10 作者（31） Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice, INFRARED PHYSICS & TECHNOLOGY, 2018, 第 3 作者（32） Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes, JOURNAL OF CRYSTAL GROWTH, 2018, 第11作者（33） Extended-wavelength InGaAsSb infrared unipolar barrier detectors, AIP ADVANCES, 2018, 第 2 作者（34） Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL), Infrared Physics and Technology, 2018, 第 10 作者（35） Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices, Appl. Phys. Lett., 2017, 第 8 作者（36） Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices, APPLIED PHYSICS LETTERS, 2017, 第 8 作者（37） Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice, CHINESE PHYSICS B, 2017, 第 6 作者（38） Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array, Chinese Physics. B, 2017, 第 3 作者（39） Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640 x 512 focal plane array, CHINESE PHYSICS B, 2017, 第 3 作者（40） Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice, ACS APPLIED MATERIALS & INTERFACES, 2017, 第 6 作者（41） GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面, Low-defect surfaces of low-temperature GaSb thin films on GaSb substrates, 红外与毫米波学报, 2017, 第 5 作者（42） GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面, Low-defect surfaces of low-temperature GaSb thin films on GaSb substrates, 红外与毫米波学报, 2017, 第 5 作者（43） 320 _ 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice, Infrared Physics & Technology, 2017, 第 8 作者（44） 320 x 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 2 作者（45） 锑化物纳米结构的中红外激光器与探测器的新进展, Recent Advances of Mid-Infrared Lasers and Detectors in Antimonide-Based Nanostructures, 中国基础科学, 2017, 第 3 作者（46） Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well., SCIENTIFIC REPORTS, 2016, （47） Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 第 3 作者（48） 大功率高效率2μm锑化镓基量子阱激光器, High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2μm, 红外与毫米波学报, 2016, 第 6 作者（49） Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm, Applied physics letters, 2016, 第 7 作者（50） InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate, JOURNAL OF CRYSTAL GROWTH, 2016, 第 2 作者（51） High Lattice Match Growth of InAsSb Based Materials by Molecular Beam Epitaxy, High Lattice Match Growth of InAsSb Based Materials by Molecular Beam Epitaxy, 中国物理快报：英文版, 2016, 第 5 作者（52） Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/GaSb Superlattices for Middle-Long and Very-Long Wavelength, Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/GaSb Superlattices for Middle-Long and Very-Long Wavelength, 中国物理快报：英文版, 2016, 第 7 作者（53） Wet Chemical Etching of Antimonide-Based Infrared Materials, Wet Chemical Etching of Antimonide-Based Infrared Materials, 中国物理快报：英文版, 2015, 第 3 作者（54） Wet Chemical Etching of Antimonide-Based Infrared Materials, CHINESE PHYSICS LETTERS, 2015, 第 3 作者（55） 中波InAs/GaSb超晶格红外焦平面探测器, In As / Ga Sb Superlattices Mid-Wavelength Infrared Focal Plane Array Detectors, 航空兵器, 2015, 第 2 作者（56） High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells, Journal of Semiconductors, 2015, 第 1 作者（57） Very long-wavelength (similar to 20 mu m) InAs/GaSb superlattice infrared detector with double InSb-like interfaces, INTERNATIONAL SYMPOSIUM ON OPTOELECTRONIC TECHNOLOGY AND APPLICATION 2014: INFRARED TECHNOLOGY AND APPLICATIONS, 2014, 第 5 作者（58） Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density, Chinese Physics Letters, 2014, 第 7 作者（59） High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy, CHINESE PHYSICS B, 2014, 第 4 作者（60） Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy, APPLIED PHYSICS LETTERS, 2014, 第 4 作者（61） Sulfurizing Method for Passivation Used in InAs/GaSb Type-II Superlattice Photodetectors, INTERNATIONAL SYMPOSIUM ON OPTOELECTRONIC TECHNOLOGY AND APPLICATION 2014: INFRARED TECHNOLOGY AND APPLICATIONS, 2014, 第 3 作者（62） High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy, Chinese Physics. B, 2014, 第 4 作者（63） Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density, CHINESE PHYSICS LETTERS, 2014, 第 7 作者（64） Single InAs quantum dot coupled to different "environments" in one wafer for quantum, Applied Physics Letters, 2013, 第 7 作者（65） Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics, APPLIED PHYSICS LETTERS, 2013, 第 7 作者（66） Short to long-wave IR detectors based on InAs/GaSb superlattices in multi-color application, Proceedings of the spie, 2013, 第 2 作者（67） 长波段InAs／GaSb超品格材料的分子束外延研究, MBE Growth of InAs/GaSb Superlattices for Long-Wavelength Infrared Detection, 航空兵器, 2013, 第 1 作者（68） Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure, JOURNAL OF APPLIED PHYSICS, 2013, 第 2 作者（69） Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices, JOURNAL OF SEMICONDUCTORS, 2013, 通讯作者（70） 掺Te的GaSb薄膜分子束外延生长及缺陷特性, Defect of Te-doped GaSb layers grown by molecular beam epitaxy, 红外与毫米波学报, 2012, 第 4 作者（71） Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 通讯作者（72） 2～5μm InAs／GaSb超晶格红外探测器, 2-5 μm InAs/GaSb superlattices infrared photodetector, 红外与激光工程, 2011, 第 3 作者（73） Preparation and photoluminescence study of patterned substrate quantum wires, ACTA PHYSICA SINICA, 2011, 第 10 作者（74） 2-5m InAs/GaSb superlattices infrared photodetector, Hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 第 3 作者（75） Preparation and photoluminescence study of patterned substrate quantum wires, ACTA PHYSICA SINICA, 2011, 第 10 作者（76） Growth and characterization of gasb-based type-ii inas/gasb superlattice photodiodes for mid-infrared detection, CHINESE PHYSICS LETTERS, 2010, 通讯作者（77） GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy, CHINESE PHYSICS LETTERS, 2009, 第 5 作者
科研活动
科研项目
（ 1 ）&nbsp锑化物超晶格的载流子寿命及其在红外探测器件中的应用研究, 负责人, 国家任务, 2014-01--2016-12（ 2 ）&nbsp中波段高工作温度锑化物超晶格红外探测器研究, 负责人, 企业委托, 2014-10--2016-09（ 3 ）&nbsp纳米异质结材料与器件微结构表征及性能评估, 负责人, 国家任务, 2018-05--2023-04（ 4 ）&nbsp锑化物红外探测, 负责人, 中国科学院计划, 2017-05--2020-05（ 5 ）&nbspXXX甚长波红外近探测技术, 负责人, 企业委托, 2017-01--2019-06（ 6 ）&nbspXXX甚长波红外探测芯片, 负责人, 国家任务, 2019-06--2023-06
2013 中国科学院大学，网络信息中心.